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FKN08PN60S -- TRIAC (Silicon Bidirectional Thyristor)
February 2008
FKN08PN60S
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
* * * * Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool
3 1: T1 2: Gate 3: T2
2
TO-92
123
1
Absolute Maximum Ratings
Symbol
VDRM VRRM IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM TJ TSTG
Ta = 25C unless otherwise noted
Parameter
Peak Repetitive Off-State Voltage RMS On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature
Value
Sine Wave 50 to 60Hz, Gate Open Commercial frequency, sine full wave 360 conduction, Tc= 70 Sinewave half cycle, peak value, non-repetitive Value corresponding to halfwave, surge on-state current, tp=8.33ms 60Hz
Rating
600 0.8 8 0.26 5 0.1 5 1 - 40 ~ 125 - 40 ~ 125
Units
V A A A 2s W W V A C C
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction to Case
(note1) (note2)
Value
45 160
Units
C/W C/W
Thermal Resistance, Junction to Ambient
Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0"*4.5"*0.062", Minimum land pad)
(c) 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 1
www.fairchildsemi.com
FKN08PN60S -- TRIAC (Silicon Bidirectional Thyristor)
Electrical Characteristics
Symbol
IDRM IRRM VTM
TC = 25C unless otherwise noted
Parameter
Repetieive Peak Off-State Current On-State Voltage I
Test Condition
VDRM/VRRM applied TC=25C, ITM=1.12A Instantaneous measurement T2(+), Gate (+) VD=12V, RL=100 T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) VD=12V, RL=100 TJ=125C, VD=1/2VDRM (I, II,III) I, III II VD = 12V, ITM = 200mA VD = 12V, IG = 10mA VDRM = 63% Rated, Tj = 125C, Exponential Rise T2(+), Gate (-) T2(-), Gate (-) II III I
Min.
Typ.
Max.
Units
0.2 20 3.0
-
100 1.8 2.0 2.0 2.0 5 5 5 15 15 20 -
A V V V V mA mA mA V mA mA mA V/s V/s
VGT
Gate Trigger Voltage (Note 2)
IGT VGD IH IL dv/dt(s) dv/dt(c)
Gate Trigger Current (Note 2) Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag
II III
Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/uS)
Commutation dv/dt test
VDRM (V)
FKN08PN60S
Test Condition
1. Junction Temperature TJ=125C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 300V
Commutating voltage and current waveforms (inductive load)
Supply Voltage (di/dt)C Main Current Time
Time
Main Voltage (dv/dt)C
Time VD
(c) 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 2
www.fairchildsemi.com
FKN08PN60S -- TRIAC (Silicon Bidirectional Thyristor)
Quadrant Definitions for a Triac
T2 Positive + (+) T2 (+) T2
Quadrant II
(-) IGT GATE T1
(+) IGT GATE T1
Quadrant I
IGT (-) T2 (-) T2
+ IGT
Quadrant III
(-) IGT GATE T1
(+) IGT GATE T1
Quadrant IV
T2 Negative
Package Marking and Ordering Information
Device Marking
K08PN60S
Device
FKN08PN60S
Package
TO-92
Packing
BULK
Tape Width
--
Quantity
--
(c) 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 3
www.fairchildsemi.com
FKN08PN60S -- TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics
Figure 1. On-State Characteristics Figure 2. Power Dissipation
PAV[W], Maximum Average Power Dissipation
1.2
ITM[A], On-State Current
1.0
TJ=125 C
1
o
TJ=25 C
o
0.8
DC
0.6
180 120
o
o
0.4
o
0.2
90 30
o
60
o
0.1 0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.0
0.2
0.4
0.6
0.8
VTM[V], On-State Voltage
ITRMS[A], On-State Current
Figure 3. RMS Current Rating
Maximum Allowable Case Temperature, TC[ C]
Figure 4. Typical Gate Trigger Current vs Junction Temperature
6
o
120
30
o
IGT[mA], Gate Trigger Current
60
o
90
110
o o
o
5
Q3
4
100
120
Q2
3
180
90
DC
Q1
2
80
1
70 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 -40
0
o
40
80
120
ITRMS[A], On-State Current
T J[ C], Junction Temperature
Figure5. Typical Gate Voltage vs Junction Temperarure
1.0
Figure6. Typical Latching Currrent vs Junction Temperature
6
VGT[mA], Gate Trigger Voltage
0.9
0.8
IL[mA], Latching Current
4
Q3
0.7
Q3 Q1
0.6
2
Q2
0.5
Q1
0.4 -40
0
o
40
80
120
0 -40
0
o
40
80
120
T J[ C], Junction Temperature
T J [ C ], Junction Tem perature
(c) 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 4
www.fairchildsemi.com
FKN08PN60S -- TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics (Continued)
Figure7. Typical Holding Current vs Junction Temperature
5
Figure8. Junction to Case Thermal Resistance
Q3
4
Junction to Case Thermal Resistance, [ C/W]
50
o
40
IH[mA],Holding Current
3
30
Q1
2
20
Q2
1
10
0 -40
0
o
40
80
120
0 1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
TJ[ C], Junction Temperature
Time, [S]
(c) 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 5
www.fairchildsemi.com
FKN08PN60S -- TRIAC (Silicon Bidirectional Thyristor)
Package Dimension
TO-92
4.58 -0.15
+0.25
14.47 0.40
0.46 0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60 0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(c) 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 6
(0.25)
www.fairchildsemi.com
FKN08PN60S TRIAC (Silicon Bidirectional Thyristor)
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 7
www.fairchildsemi.com

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